CY62158E_13 Datasheet, PDF (1/16 Pages) Cypress Semiconductor – 8-Mbit (1 M x 8) Static RAM

CY62158E MoBL^®
8-Mbit (1 M × 8) Static RAM
8-Mbit (1 M × 8) Static RAM
Features
■ Very high speed: 45 ns
❐ Wide voltage range: 4.5 V–5.5 V
■ Ultra low active power
❐ Typical active current:1.8 mA at f = 1 MHz
❐ Typical active current: 18 mA at f = f_max
■ Ultra low standby power
❐ Typical standby current: 2 A
❐ Maximum standby current: 8 A
■ Easy memory expansion with CE₁, CE₂ and OE features
■ Automatic power down when deselected
■ CMOS for optimum speed and power
■ Offered in Pb-free 44-pin TSOP II package
Functional Description
The CY62158E MoBL^® is a high performance CMOS static RAM
organized as 1024K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL^) in portable
applications. The device also has an automatic power down
feature that significantly reduces power consumption. Placing
the device into standby mode reduces power consumption
significantly when deselected (CE₁ HIGH or CE₂ LOW).
To write to the device, take Chip Enables (CE₁ LOW and CE₂
HIGH) and Write Enable (WE) input LOW. Data on the eight I/O
pins (I/O₀ through I/O₇) is then written into the location specified
on the address pins (A₀ through A₁₉).
To read from the device, take Chip Enables (CE₁ LOW and CE₂
HIGH) and OE LOW while forcing the WE HIGH. Under these
conditions, the contents of the memory location specified by the
address pins appear on the I/O pins.
The eight input and output pins (I/O₀ through I/O₇) are placed in
a high impedance state when the device is deselected (CE₁
HIGH or CE₂ LOW), the outputs are disabled (OE HIGH), or a
write operation is in progress (CE₁ LOW and CE₂ HIGH and WE
LOW). See the Truth Table on page 11 for a complete description
of read and write modes.
The CY62158E device is suitable for interfacing with processors
that have TTL I/P levels. It is not suitable for processors that
require CMOS I/P levels. Please see Electrical Characteristics
on page 4 for more details and suggested alternatives.
Logic Block Diagram
CE1
CE2
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
WE
OE
DATA IN DRIVERS
1024K x 8
ARRAY
COLUMN DECODER
POWER
DOWN
IIO/O₀0
I^IO^/O₁1
IIO/O₂2
I^IO^/O₃3
IIO/O₄4
IIO/O₅5
IIO/O₆6
IIO/O₇7
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05684 Rev. *I
• San Jose, CA 95134-1709 • 408-943-2600
Revised June 10, 2013