CY62146G Datasheet, PDF (1/22 Pages) Cypress Semiconductor – 4-Mbit (256K words × 16 bit) Static RAM with

CY62146G/CY62146GE
CY62146GSL/CY62146GESL MoBL^®
4-Mbit (256K words × 16 bit) Static RAM with
Error-Correcting Code (ECC)
4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC)
Features
■ High speed: 45 ns/55 ns
■ Ultra-low standby power
❐ Typical standby current: 3.5 A
❐ Maximum standby current: 8.7 A
■ Embedded ECC for single-bit error correction^[1]
■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
■ 1.0-V data retention
■ TTL-compatible inputs and outputs
■ Error indication (ERR) pin to indicate 1-bit error detection and
correction
■ Pb-free 48-ball VFBGA and 44-pin TSOP II packages
Functional Description
CY62146G/ CY62146GE and CY62146GSL / CY62146GESL
are high-performance CMOS low-power (MoBL) SRAM devices
with embedded ECC. Both devices are offered in single and dual
chip enable options and in multiple pin configurations. The
CY62146GE/ CY62146GESL device includes an ERR pin that
signals an error-detection and correction event during a read
cycle. The CY62146GSL/CY62146GESL^[1] device supports a
wide voltage range of 2.2 V–3.6 V and 4.5 V–5.5 V.
Devices with a single chip enable input are accessed by
asserting the chip enable (CE) input LOW. Dual chip enable
devices are accessed by asserting both chip enable inputs – CE₁
as low and CE₂ as HIGH.
Data writes are performed by asserting the Write Enable (WE)
input LOW, while providing the data on I/O₀ through I/O₁₅ and
address on A₀ through A₁₇ pins. The Byte High Enable (BHE)
and Byte Low Enable (BLE) inputs control write operations to the
upper and lower bytes of the specified memory location. BHE
controls I/O₈ through I/O₁₅ and BLE controls I/O₀ through I/O₇.
Data reads are performed by asserting the Output Enable (OE)
input and providing the required address on the address lines.
Read data is accessible on the I/O lines (I/O₀ through I/O₁₅).
Byte accesses can be performed by asserting the required byte
enable signal (BHE or BLE) to read either the upper byte or the
lower byte of data from the specified address location.
All I/Os (I/O₀ through I/O₁₅) are placed in a HI-Z state when the
device is deselected (CE HIGH for a single chip enable device
and CE₁ HIGH/CE₂ LOW for a dual chip enable device), or
control signals are deasserted (OE, BLE, BHE).
On the CY62146GE/CY62146GESL devices, the detection and
correction of a single-bit error in the accessed location is
indicated by the assertion of the ERR output (ERR = HIGH)^[2].
See
the
Truth
Table
–
CY62146G/CY62146GE/CY62146GSL/CY62146GESL
on
page 17 for a complete description of read and write modes.
The logic block diagrams are on page 2.
Product Portfolio
Product^[3]
CY62146G(E)18
CY62146G(E)30
CY62146G(E)
CY62146G(E)SL^[5]
Features and
Options
(see the Pin
Configurations
section)
Single or dual
Chip Enables
Optional ERR
pin
Range
Industrial
V_CC Range (V) Speed (ns)
1.65 V–2.2 V
55
2.2 V–3.6 V
45
4.5 V–5.5 V
2.2 V–3.6 V and
4.5 V–5.5 V
Power Dissipation
Operating I_CC, (mA)
f = f_max
Standby, I_SB2 (µA)
Typ^[4]
Max
Typ^[4]
Max
15
20
3.5
10
15
20
3.5
8.7
Notes
1. Datasheet specifications are not guaranteed for V_CC in the range of 3.6 V to 4.5 V.
2. This device does not support automatic write-back on error detection.
3. The ERR pin is available only for devices which have ERR option “E” in the ordering code. Refer Ordering Information for details.
4.
Typical values
V_CC = 3 V (for
are included for reference only and are not guaranteed or
V_CC range of 2.2 V–3.6 V), and V_CC = 5 V (for V_CC range
tested. Typical values are measured
of 4.5 V–5.5 V), T_A = 25 °C.
at
V_CC
=
1.8
V
(for
a
V_CC
range
of
1.65
V–2.2
V),
5. Datasheet specifications are not guaranteed for V_CC in the range of 3.6 V to 4.5 V.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-95420 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 11, 2016