CY62137CV25 Datasheet, PDF (1/13 Pages) Cypress Semiconductor – 2M (128K x 16) Static RAM

CY62137CV25/30/33 MoBL^®
CY62137CV MoBL^®
Features
• Very high speed: 55 ns and 70 ns
• Voltage range:
— CY62137CV25: 2.2V–2.7V
— CY62137CV30: 2.7V–3.3V
— CY62137CV33: 3.0V–3.6V
— CY62137CV: 2.7V–3.6V
• Pin-compatible with the CY62137V
• Ultra-low active power
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 5.5 mA @ f = f_max (70-ns
speed)
• Low and ultra-low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball FBGA
Functional Description^[1]
The CY62137CV25/30/33 and CY62137CV are high-perfor-
mance CMOS static RAMs organized as 128K words by 16
bits. These devices feature advanced circuit design to provide
ultra-low active current. This is ideal for providing More Battery
2M (128K x 16) Static RAM
Life™ (MoBL®) in portable applications such as cellular tele-
phones. The devices also has an automatic power-down fea-
ture that significantly reduces power consumption by 80%
when addresses are not toggling. The device can also be put
into standby mode reducing power consumption by more than
99% when deselected (CE HIGH or both BLE and BHE are
HIGH). The input/output pins (I/O₀ through I/O₁₅) are placed
in a high-impedance state when: deselected (CE HIGH), out-
puts are disabled (OE HIGH), both Byte High Enable and Byte
Low Enable are disabled (BHE, BLE HIGH), or during a write
operation (CE LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O₀ through I/O₇), is
written into the location specified on the address pins (A₀
through A₁₆). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O₈ through I/O₁₅) is written into the location
specified on the address pins (A₀ through A₁₆).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O₀ to I/O₇. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O₈ to I/O₁₅. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
Logic Block Diagram
A₁₀ 10
A₉
A₈
A₇
A₆
A₅
A₄
A₃
A₂
A₁
A₀
DATA IN DRIVERS
128K x 16
RAM Array
2048 x 1024
I/O₀ – I/O₇
I/O₈ – I/O₁₅
COLUMN DECODER
Power -down
Circuit
CE
BHE
BLE
BHE
WE
CE
OE
BLE
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05201 Rev. *D
Revised September 20, 2002