CY62136FV30_09 Datasheet, PDF (1/12 Pages) Cypress Semiconductor – 2 Mbit (128K x 16) Static RAM

CY62136FV30 MoBL^®
2 Mbit (128K x 16) Static RAM
Features
■ Very high speed: 45 ns
■ Temperature ranges
❐ Industrial: –40°C to +85°C
❐ Automotive-A: –40°C to +85°C
❐ Automotive-E: –40°C to +125°C
■ Wide voltage range: 2.20V to 3.60V
■ Pin compatible with CY62136V, CY62136CV30/CV33, and
CY62136EV30
■ Ultra low standby power
❐ Typical standby current: 1 μA
❐ Maximum standby current: 5 μA (Industrial)
■ Ultra low active power
❐ Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)
■ Easy memory expansion with CE and OE features
■ Automatic power down when deselected
■ CMOS for optimum speed and power
■ Available in Pb-free 48-ball VFBGA and 44-pin TSOP II
packages
Functional Description
The CY62136FV30 is a high performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL^®) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption by 90 percent when addresses are not toggling.
Placing the device into standby mode reduces power
consumption by more than 99 percent when deselected (CE
HIGH). The input and output pins (I/O₀ through I/O₁₅) are placed
in a high impedance state when:
■ Deselected (CE HIGH)
■ Outputs are disabled (OE HIGH)
■ Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
■ Write operation is active (CE LOW and WE LOW)
Write to the device by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O₀ through I/O₇) is written into the location
specified on the address pins (A₀ through A₁₆). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O₈ through
I/O₁₅) is written into the location specified on the address pins
(A₀ through A₁₆).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on I/O₀ to I/O₇. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O₈ to I/O₁₅. See the “Truth Table” on page 9 for a
complete description of read and write modes.
For best practice recommendations, refer to the Cypress appli-
cation note AN1064, SRAM System Guidelines.
Logic Block Diagram
A₁₀
A₉
A₈
A₇
A₆
A₅
A₄
A₃
A₂
A₁
A₀
DATA IN DRIVERS
128K x 16
RAM Array
I/O₀–I/O₇
I/O₈–I/O₁₅
COLUMN DECODER
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-08402 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised March 11, 2009
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