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CY62128EV30LL-45ZXIT Datasheet, PDF (1/18 Pages) Cypress Semiconductor – 1-Mbit (128 K x 8) Static RAM
CY62128EV30 MoBL®
1-Mbit (128 K × 8) Static RAM
1-Mbit (128 K × 8) Static RAM
Features
■ Very high speed: 45 ns
■ Temperature ranges:
❐ Industrial: –40 °C to +85 °C
■ Wide voltage range: 2.2 V to 3.6 V
■ Pin compatible with CY62128DV30
■ Ultra low standby power
❐ Typical standby current: 1 µA
❐ Maximum standby current: 4 µA
■ Ultra low active power
❐ Typical active current: 1.3 mA at f = 1 MHz
■ Easy memory expansion with CE1, CE2, and OE features
■ Automatic power-down when deselected
■ Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
■ Offered in Pb-free 32-pin SOIC, 32-pin thin small outline
package (TSOP) Type I, and 32-pin shrunk thin small outline
package (STSOP) packages
Functional Description
The CY62128EV30 is a high performance CMOS static RAM
module organized as 128K words by 8-bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL®) in portable
applications such as cellular telephones. The device also has an
automatic power-down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device in standby mode reduces power consumption by more
than 99 percent when deselected (CE1 HIGH or CE2 LOW). The
eight input and output pins (I/O0 through I/O7) are placed in a
high impedance state when the device is deselected (CE1 HIGH
or CE2 LOW), the outputs are disabled (OE HIGH), or a write
operation is in progress (CE1 LOW and CE2 HIGH and WE
LOW).
To write to the device, take chip enable (CE1 LOW and CE2
HIGH) and write enable (WE) inputs LOW. Data on the eight I/O
pins is then written into the location specified on the address pin
(A0 through A16).
To read from the device, take chip enable (CE1 LOW and CE2
HIGH) and output enable (OE) LOW while forcing write enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the I/O pins.
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
CE1
CE2
WE
OE
INPUT BUFFER
128K x 8
ARRAY
COLUMN DECODER
POWER
DOWN
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 38-05579 Rev. *J
• San Jose, CA 95134-1709 • 408-943-2600
Revised June 25, 2011
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