CY62127DV18_05 Datasheet, PDF(1/11 Page) Cypress Semiconductor

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

CY62127DV18_05 Datasheet, PDF (1/11 Pages) Cypress Semiconductor – 1 Mb (64K x 16) Static RAM

PRELIMINARY

CY62127DV18

MoBL2Â®

Features

â¢ Very high speed: 55 ns

â¢ Voltage range: 1.65V to 2.2V

â¢ Ultra-low active power

â Typical active current: 0.5 mA @ f = 1 MHz

â Typical active current: 3.75 mA @ f = fMAX

â¢ Ultra-low standby power

â¢ Easy memory expansion with CE</> and OE</> fea-

tures

â¢ Automatic power-down when deselected

â¢ Packages offered in a 48-ball FBGA and a 44-lead TSOP

Type II

Functional Description[1]

The CY62127DV18 is a high-performance CMOS static RAM

organized as 64K words by 16 bits. This device features ad-

vanced circuit design to provide ultra-low active current. This

is ideal for providing More Battery Lifeâ¢ (MoBLÂ®) in portable

applications such as cellular telephones. The device also has

an automatic power-down feature that significantly reduces

Logic Block Diagram

1 Mb (64K x 16) Static RAM

power consumption by 99% when addresses are not toggling.

The device can be put into standby mode reducing power con-

sumption by more than 99% when deselected Chip Enable

(CE) HIGH or both BHE and BLE are HIGH. The input/output

pins (I/O0 through I/O15) are placed in a high-impedance state

when: deselected Chip Enable (CE) HIGH, outputs are dis-

abled (OE HIGH), both Byte High Enable and Byte Low Enable

are disabled (BHE, BLE HIGH) or during a write operation

(Chip Enable (CE) LOW and Write Enable (WE) LOW).

Writing to the device is accomplished by taking Chip Enable

(CE) LOW and Write Enable (WE) input LOW. If Byte Low

Enable (BLE) is LOW, then data from I/O pins (I/O0 through

I/Os pins (A0 through A15). If Byte High Enable (BHE) is LOW,

then data from I/O pins (I/O8 through I/O15) is written into the

location specified on the ad

Reading from the device is accomplished by taking Chip En-

able (CE) LOW and Output Enable (OE) LOW while forcing the

Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,

then O7. If Byte High Enable (BHE) is LOW, then data from

memory will appear on I/O8 to I/O15. See the truth table at the

back of this data sheet for a complete description of re

DATA IN DRIVERS

A10

64K x 16

RAM Array

2048 X 512

I/O0âI/O7

I/O8âI/O15

COLUMN DECODER

Power -Down

Circuit

BHE

BLE

BHE

BLE

Note:

1. For best-practice recommendations, please refer to the Cypress application note âSystem Design Guidelinesâ on http://www.cypress.com.

Cypress Semiconductor Corporation â¢

Document #: 38-05226 Rev. *A

3901 North First Street â¢ San Jose, CA 95134 â¢ 408-943-2600

Revised May 5, 2005

▷