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CY62127BV Datasheet, PDF (1/11 Pages) Cypress Semiconductor – 64K x 16 Static RAM
27B V
CY62127BV
64K x 16 Static RAM
Features
• 2.7V–3.6V operation
• CMOS for optimum speed/power
• Low active power (70 ns, LL version)
— 54 mW (max.) (15 mA)
• Low standby power (70 ns, LL version)
— 54 µW (max.) (15 µA)
• Automatic power-down when deselected
— Power down either with CE or BHE and BLE HIGH
• Independent control of Upper and Lower Bytes
• Available in 44-pin TSOP II (forward) and fBGA
Functional Description
The CY62127BV is a high-performance CMOS Static RAM
organized as 65,536 words by 16 bits. This device has an au-
tomatic power-down feature that significantly reduces power
consumption by 99% when deselected. The device enters
power-down mode when CE is HIGH or when CE is LOW and
both BLE and BHE are HIGH.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is
written into the location specified on the address pins (A0
through A15). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O9 through I/O16) is written into the location
specified on the address pins (A0 through A15).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O9 to I/O16. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O1 through I/O16) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY62127BV is available in standard 44-pin TSOP Type II
(forward pinout) and fBGA packages.
Logic Block Diagram
DATA IN DRIVERS
A12
A11
A10
A9
A7
64K x 16
A6
RAM Array
A3
1024 X 1024
A2
A1
A0
COLUMN DECODER
I/O1–I/O8
I/O9–I/O16
BHE
WE
CE
OE
BLE
Pin Configurations
TSOP II (Forward)
Top View
A4 1
A3 2
A2 3
A1 4
A0 5
CE 6
I/O1 7
I/O2 8
I/O3 9
I/O4 10
VCC 11
VSS 12
I/O5 13
I/O6 14
I/O7 15
I/O8 16
WE 17
A15 18
A14 19
A13 20
A12 21
NC 22
44 A5
43 A6
42 A7
41 OE
40 BHE
39 BLE
38 I/O16
37 I/O15
36 I/O14
35 I/O13
34 VSS
33 VCC
32 I/O12
31 I/O11
30 I/O10
29 I/O9
28 NC
27 A8
26 A9
25 A10
24 A11
23 NC
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05155 Rev. **
Revised September 6, 2001