CY22E016L_07 Datasheet, PDF (1/14 Pages) Cypress Semiconductor – 16 Kbit (2K x 8) nvSRAM

CY22E016L
16 Kbit (2K x 8) nvSRAM
Features
■ 25 ns, 35 ns and 45 ns access times
■ Hands off automatic STORE on power down with external
68 μF capacitor
■ STORE to QuantumTrap™ non-volatile elements is initiated
by hardware or AutoStore on power down
■ RECALL to SRAM is initiated on power up
■ Infinite READ, WRITE, and RECALL cycles
■ 10 mA typical ICC at 200 ns cycle time
■ 1,000,000 STORE cycles to QuantumTrap
■ 100 year data retention to QuantumTrap
■ Single 5V operation +10%
■ Commercial and industrial temperature
■ SOIC package
■ RoHS compliance
Logic Block Diagram
Functional Description
The Cypress CY22E016L is a fast static RAM with a
non-volatile element incorporated in each static memory cell.
The SRAM is read and written an infinite number of times,
while independent, non-volatile data resides in non-volatile
elements. Data transfers from the SRAM to the non-volatile
elements (the STORE operation) takes place automatically on
power down. A 68 μF or larger capacitor tied from V_CAP to
ground guarantees the STORE operation, regardless of power
down slew rate or loss of power from “hot swapping.” Transfers
from the non-volatile elements to the SRAM (the RECALL
operation) take place automatically on restoration of power. A
hardware STORE is initiated with the HSB pin.
Quantum Trap
V_CC
V_CAP
32 X 512
POWER
A₅
STORE
CONTROL
A₆
A₇
A₈
STATIC RAM
ARRAY
32 X 512
RECALL
STORE/
RECALL
CONTROL
HSB
A₉
DQ ₀
DQ ₁
DQ ₂
DQ ₃
DQ ₄
DQ ₅
DQ ₆
DQ ₇
COLUMN I/O
COLUMN DEC
A₀ A₁ A₂ A₃ A₄ A₁₀
OE
CE
WE
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-06727 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised August 1, 2007
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