CY15B128J Datasheet, PDF (1/19 Pages) Cypress Semiconductor – 128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM

CY15B128J
128-Kbit (16K × 8) Automotive Serial (I²C)
F-RAM
128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM
Features
■ 128-Kbit ferroelectric random access memory (F-RAM)
logically organized as 16K × 8
❐ High-endurance 100 trillion (10¹⁴) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast two-wire serial interface (I²C)
❐ Up to 3.4-MHz frequency^[1]
❐ Direct hardware replacement for serial EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Device ID
❐ Manufacturer ID and Product ID
■ Low power consumption
❐ 175-A active current at 100 kHz
❐ 150-A standby current
❐ 8-A sleep mode current
■ Low-voltage operation: V_DD = 2.0 V to 3.6 V
■ Automotive-A temperature: –40 C to +85 C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Functional Description
The CY15B128J is a 128-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike EEPROM, the CY15B128J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. F-RAM also exhibits much lower power during writes
than EEPROM because write operations do not require an
internally elevated power supply voltage for write circuits. The
CY15B128J is capable of supporting 10¹⁴ read/write cycles, or
100 million times more write cycles than EEPROM.
These capabilities make the CY15B128J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The CY15B128J provides substantial benefits to users of serial
EEPROM as a hardware drop-in replacement. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
Automotive-A temperature range of –40 C to +85 C.
For a complete list of related documentation, click here.
Counter
Address
Latch
14
16 K x 8
F-RAM Array
SDA
SCL
WP
A0-A2
Serial to Parallel
Converter
Control Logic
8
Data Latch
8
8
Device ID and
Manufacturer ID
Note
1.
The CY15B128J does not meet the NXP I²C specification in the
Refer to the DC Electrical Characteristics table for more details.
Fast-mode
Plus
(Fm+,
1
MHz)
for
I_OL
and
in
the
High
Speed
Mode
(Hs-mode,
3.4
MHz)
for
V_hys.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-90872 Rev. *G
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 13, 2016