CY14C101Q_12 Datasheet, PDF (1/33 Pages) Cypress Semiconductor – 1-Mbit (128 K × 8) Serial (SPI) nvSRAM

CY14C101Q
CY14B101Q
CY14E101Q
1-Mbit (128 K × 8) Serial (SPI) nvSRAM
1-Mbit (128 K × 8) Serial (SPI) nvSRAM
Features
■ 1-Mbit nonvolatile static random access memory (nvSRAM)
internally organized as 128 K × 8
❐ STORE to QuantumTrap nonvolatile elements initiated
automatically on power-down (AutoStore) or by using SPI
instruction (Software STORE) or HSB pin (Hardware
STORE)
❐ RECALL to SRAM initiated on power-up (Power-Up
RECALL) or by SPI instruction (Software RECALL)
❐ Support automatic STORE on power-down with a small
capacitor (except for CY14X101Q1A)
■ High reliability
❐ Infinite read, write, and RECALL cycles
❐ 1million STORE cycles to QuantumTrap
❐ Data retention: 20 years at 85 °C
■ 40 MHz, and 104 MHz High-speed serial peripheral interface
(SPI)
❐ 40-MHz clock rate SPI write and read with zero cycle delay
❐ 104-MHz clock rate SPI write and SPI read (with special fast
read instructions)
❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)
■ SPI access to special functions
❐ Nonvolatile STORE/RECALL
❐ 8-byte serial number
❐ Manufacturer ID and Product ID
❐ Sleep mode
■ Write protection
❐ Hardware protection using Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
❐ Average active current of 3 mA at 40 MHz operation
❐ Average standby mode current of 150 A
❐ Sleep mode current of 8 A
■ Industry standard configurations
❐ Operating voltages:
• CY14C101Q: V_CC = 2.4 V to 2.6 V
• CY14B101Q: V_CC = 2.7 V to 3.6 V
• CY14E101Q: V_CC = 4.5 V to 5.5 V
❐ Industrial temperature
❐ 8- and 16-pin small outline integrated circuit (SOIC) package
❐ Restriction of hazardous substances (RoHS) compliant
Functional Overview
The Cypress CY14X101Q combines a 1-Mbit nvSRAM with a
nonvolatile element in each memory cell with serial SPI interface.
The memory is organized as 128 K words of 8 bits each. The
embedded nonvolatile elements incorporate the QuantumTrap
technology, creating the world’s most reliable nonvolatile
memory. The SRAM provides infinite read and write cycles, while
the QuantumTrap cells provide highly reliable nonvolatile
storage of data. Data transfers from SRAM to the nonvolatile
elements (STORE operation) takes place automatically at
power-down (except for CY14X101Q1A). On power-up, data is
restored to the SRAM from the nonvolatile memory (RECALL
operation). You can also initiate the STORE and RECALL
operations through SPI instruction.
Configuration
Feature
AutoStore
Software
STORE
Hardware
STORE
CY14X101Q1A CY14X101Q2A CY14X101Q3A
No
Yes
Yes
Yes
Yes
Yes
No
No
Yes
Logic Block Diagram
Status Register
Serial Number
8x8
Manufacturer ID /
Product ID
SI
CS
SCK
WP
SO
WRSR/RDSR/WREN
RDSN/WRSN/RDID
SPI Control Logic
Write Protection
Instruction decoder
READ/WRITE
STORE/RECALL/ASENB/ASDISB
Memory
Data & Address
Control
VCC
VCAP
Power Control Block
SLEEP
QuantumTrap
128 K x 8
SRAM
128 K x 8
STORE
RECALL
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-54393 Rev. *I
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 21, 2012