DS-72-02 Datasheet, PDF (2/5 Pages) Cymbet Corporation – Rechargeable Solid State Energy Storage: 12uAh, 3.8V

EnerChip™ CBC012 Solid State Energy Storage
Operating Characteristics
Parameter
Condition
Min Typical
Discharge Cutoff Voltage
25°C
3.0⁽¹⁾
-
Charge Voltage
Pulse Discharge Current
25°C
25°C
4.0⁽²⁾
4.1
100⁽³⁾
-
Cell Resistance (25°C)
Charge cycle 2
-
2.8
Charge cycle 1000
-
13
Self-Discharge (5-yr average; 25°C)
Non-recoverable
-
2.5
Recoverable
-
1.5⁽⁴⁾
Operating Temperature
-
-20
25
Storage Temperature
-
-40
-
Recharge Cycles
25°C
10% depth-of-discharge 5000
-
(to 80% of rated
50% depth-of discharge 1000
-
capacity; 4.1V charge
voltage)
40°C
10% depth-of-discharge 2500
-
50% depth-of-discharge 500
-
Recharge Time (to 80% of rated capacity;
Charge cycle 2
-
10
4.1V charge voltage)
Charge cycle 1000
-
45
Capacity
50µA discharge; 25°C
12
-
(1) _{Failure to cutoff the discharge voltage at 3.0V will result in EnerChip performance degradation.}
(2) _{Charging at 4.0V will charge the cell to approximately 70% of its rated capacity.}
(3) _{Typical pulse duration = 20 milliseconds.}
(4) _{First month recoverable self-discharge is 4% average.}
(5) _{Storage temperature is for uncharged EnerChip.}
Note: All specifications contained within this document are subject to change without notice
Max
-
4.3
-
4.5
20
-
-
+70
+125⁽⁵⁾
-
-
-
-
22
70
-
Units
V
V
µA
kΩ
% per year
% per year
°C
°C
cycles
cycles
cycles
cycles
minutes
µAh
EnerChip Discharge Characteristics
©2009-2010Cymbet Corporation • Tel: [phone] • www.cymbet.com
DS-72-02 Rev A

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