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CY7C1062DV33_07 Datasheet, PDF (3/11 Pages) Cypress Semiconductor – 16-Mbit (512K X 32) Static RAM
CY7C1062DV33
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on VCC Relative to GND [2]....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State [2]................................... –0.5V to VCC + 0.5V
DC Input Voltage [2] ............................... –0.5V to VCC + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............. ...............................>2001V
(MIL-STD-883, Method 3015)
Latch Up Current ..................................................... >200 mA
Operating Range
Range
Industrial
Ambient
Temperature
–40°C to +85°C
VCC
3.3V ± 0.3V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions [3]
VOH
Output HIGH Voltage
VCC = Min, IOH = –4.0 mA
VOL
Output LOW Voltage
VCC = Min, IOL = 8.0 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage [2]
IIX
Input Leakage Current
GND < VI < VCC
IOZ
Output Leakage Current
GND < VOUT < VCC, Output disabled
ICC
VCC Operating Supply Current VCC = Max, f = fMAX = 1/tRC
IOUT = 0 mA CMOS levels
ISB1
Automatic CE Power Down Max VCC, CE > VIH, VIN > VIH or
Current — TTL Inputs
VIN < VIL, f = fMAX
ISB2
Automatic CE Power Down Max VCC, CE > VCC – 0.3V,
Current —CMOS Inputs
VIN > VCC – 0.3V, or VIN < 0.3V, f = 0
–10
Unit
Min
Max
2.4
V
0.4
V
2.0 VCC + 0.3
V
–0.3
0.8
V
–1
+1
µA
–1
+1
µA
175
mA
30
mA
25
mA
Note
2. VIL (min) = –2.0V and VIH(max) = VCC + 2V for pulse durations of less than 20 ns.
3. CE indicates a combination of all three chip enables. When active LOW, CE indicates the CE1 , CE2 and CE3 LOW. When HIGH, CE indicates the CE1, CE2, or CE3 HIGH.
Document Number: 38-05477 Rev.*D
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