PDP93010BP20 Datasheet, PDF (3/9 Pages) CT Micro International Corporation – SMD Type Photo Diode

PDP93010BP20
SMD Type Photo Diode
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters

Spectral Bandwidth
P
Peak Sensitivity
View Angle at X axis
θ1/2
View Angle at Y axis
Test Conditions
-
-
VR=5V
Min Typ Max Units Notes
700
-
1100 nm
-
900
-
nm
-
72.5
-
deg
2
-
67.5
-
Electrical Characteristics
Symbol
Parameters
ID
Dark Current
VBR Reverse Breakdown Voltage
VOC Open-Circuit Voltage
ISC Short-Circuit Current
IR
Reverse Light Current
CT Total Capacitance
Test Conditions
Ee=0mW /cm²
VR=10V
Ee=0mW /cm²
IR=100uA
Ee=1mW /cm²
P=940nm
Ee=1mW /cm²
P=940nm, VR=5V
Ee=0mW /cm²
f=1MHz ,VR=5V
Min Typ Max Units Notes
-
-
10
nA
33
200
-
V
-
0.42
-
V
-
1.72
-
µA
1.3 1.90
-
µA
-
7.89
-
pF
Switching Characteristics
Symbol
Parameters
tr
Rise Time
tf
Fall Time
Test Conditions
VR = 5V, RL = 10kΩ
Min Typ Max Units Notes
-
500
-
ns
-
500
-
Notes:
1 : Soldering time≦5 seconds.
2:
CT Micro
Proprietary & Confidential
Page 3
Rev 3
Jan, 2014