CTL505NS10-T52 Datasheet, PDF (3/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTL505NS10-T52
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
Test Conditions
VGS= 0V, ID= 250µA
VDS = 100V, VGS = 0V
VGS = ±20V, VDS = 0V
Min Typ Max Units Notes
100
-
-
V
-
-
1
µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions
VGS = 10V, ID = 25A
VGS = VDS, ID =250µA
Min Typ Max Units Notes
-
14
17
mΩ
3
2.0
-
4.0
V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VGS =0V,
VDS =15V
f=1MHz
Min Typ Max Units Notes
-
6170
-
-
427
-
pF
-
307
-
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR
Rise Time
TD(OFF)
Turn-Off Delay Time
TF
Fall Time
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
VDS = 50V ,
RG = 2.5Ω ,
VGS = 10V,
RL = 1.8Ω ,
VDS = 80V ,
VGS = 4.5V ,
ID =28A ,
Min Typ Max Units Notes
-
42.5
-
-
85.5
-
ns
-
154
-
-
25
-
-
28
-
-
28.5
-
nC
-
34.5
-
CT Micro
Proprietary & Confidential
Page 3
Rev 2
Jun, 2015