CT817 Datasheet, PDF (3/16 Pages) CT Micro International Corporation – DC Input 4-Pin Phototransistor Optocoupler

CT817 Series
DC Input 4-Pin Phototransistor Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
VF
Forward voltage
IR
Reverse Current
CIN
Input Capacitance
Test Conditions
IF=10mA
VR = 6V
f= 1MHz
Min Typ Max Units Notes
-
1.24
1.4
V
-
-
5
µA
-
10
30
pF
Detector Characteristics
Symbol
Parameters
BVCEO Collector-Emitter Breakdown
BVECO Emitter-Collector Breakdown
ICEO
Collector-Emitter Dark Current
Test Conditions
IC= 100µA
IE= 100µA
VCE= 20V, IF=0mA
Min Typ Max Units Notes
35
-
-
V
6
-
-
V
-
-
100
nA
Transfer Characteristics
Symbol
Parameters
CT817
CT817A
CTR Current Transfer Ratio CT817B
CT817C
CT817D
VCE(SAT)
Collector-Emitter Saturation
Voltage
RIO
Isolation Resistance
CIO
Isolation Capacitance
Test Conditions
IF= 5mA, VCE= 5V
IF= 20mA, IC= 1mA
VIO= 500VDC
f= 1MHz
Min Typ
50
-
80
-
130
-
200
-
300
-
-
0.1
5x10¹⁰
-
-
0.25
Max
600
160
260
400
600
Units Notes
%
0.2
V
-
Ω
1
pF
Switching Characteristics
Symbol
Parameters
tr
Rise Time
tf
Fall Time
Test Conditions
IC= 2mA, VCE= 2V
RL= 100Ω
Min Typ Max Units Notes
-
6
18
µs
-
8
18
CT Micro
Proprietary & Confidential
Page 3
Rev 3
May, 2016