CT816L Datasheet, PDF (3/16 Pages) CT Micro International Corporation – DC Low Current Input 4-Pin Phototransistor Optocoupler

CT816L Series
DC Low Current Input 4-Pin Phototransistor Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
VF
Forward voltage
IR
Reverse Current
CIN
Input Capacitance
Test Conditions
IF=1mA
VR = 6V
f= 1MHz
Min Typ Max Units Notes
-
1.3
1.4
V
-
-
5
µA
-
15
-
pF
Detector Characteristics
Symbol
Parameters
BVCEO Collector-Emitter Breakdown
BVECO Emitter-Collector Breakdown
ICEO
Collector-Emitter Dark Current
Test Conditions
IC= 100µA
IE= 100µA
VCE= 20V, IF=0mA
Min Typ Max Units Notes
80
-
-
V
7
-
-
V
-
-
100
nA
Transfer Characteristics
Symbol
Parameters
Test Conditions
CT816L2
CTR
CT816L3
Current Transfer Ratio
IF= 1mA, VCE= 0.5V
CT816L4
CT816L5
CT816L2
CTR
CT816L3
Current Transfer Ratio
IF= 0.5mA, VCE= 1.5V
CT816L4
CT816L5
CT816L2 IF= 1mA, IC= 0.32mA
VCE(SAT)
Collector-Emitter
Saturation Voltage
CT816L3 IF= 1mA, IC= 0.50mA
CT816L4 IF= 1mA, IC= 0.80mA
CT816L5 IF= 1mA, IC= 1.25mA
RIO
Isolation Resistance
VIO= 500VDC
CIO
Isolation Capacitance
f= 1MHz
Min Typ
63
-
100
-
160
-
250
-
32
75
50
120
80
200
125
300
-
0.2
-
0.2
-
0.2
-
0.2
5x10¹⁰
-
-
0.25
Max
125
200
320
500
-
-
-
-
0.4
0.4
0.4
0.4
-
1
Units Notes
%
%
V
Ω
pF
CT Micro
Proprietary & Confidential
Page 3
Rev.2
Oct, 2015