CT3400A-R3 Datasheet, PDF (3/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT3400A-R3
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
Test Conditions
VGS=0V, ID= 250µA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
Min Typ Max Units Notes
30
-
-
V
-
-
1
µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(TH) Gate-Source Threshold Voltage
Test Conditions
VGS = 10V, ID = 6.0A
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID = 4.0A
VGS = VDS, ID =250µA
Min
Typ
Max Units Notes
-
23.0
28
mΩ
-
26.0
35
mΩ
3
-
35.0
50
mΩ
0.7
-
1.4
V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VDS = 10V ,
VGS = 0V,
f=1MHz
Min
Typ
Max Units Notes
-
595
-
-
60
-
pF
-
48
-
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR
Rise Time
TD(OFF)
Turn-Off Delay Time
TF
Fall Time
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
VDS = 10V ,
VGS = 4.5V,
RG = 6Ω,
ID =5.8A
VDS = 10V ,
VGS = 4.5V,
ID = 5.8A
Min
Typ
Max Units Notes
-
2.1
-
-
31.0
-
ns
-
16.5
-
-
6.5
-
69
-
-
1.4
-
nC
-
2.1
-
CT Micro
Proprietary & Confidential
Page 3
Rev 4
Aug, 2015