HIRP3216Q18-C0 Datasheet, PDF (2/9 Pages) CT Micro International Corporation – SMD Type 850nm Infrared Emitter

HIRP3216Q18-C0
SMD Type 850nm Infrared Emitter
Absolute Maximum Rating at 25⁰C
Symbol
Parameters
IF
Continuous Forward Current
IFP
Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD
Power Dissipation at(or below) 25℃Free Air Temperature
RTHJA Junction to Ambient Thermal Resistance
Ratings
70
0.7
5
-40 ~ +85
-40 ~ +100
260
140
540
Units
mA
A
V
0_C
0_C
0_C
mW
0_C/W
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie
Radiant Intensity
λp Peak Wavelength
Δλ Spectral Bandwidth
θ1/2 Angle of Half Intensity
Test Conditions
IF=20mA
IF =70mA
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
12.5
20
-
65
-
-
mW/sr
-
830
850
870
nm
-
30
-
nm
-
10
-
deg
Electrical Characteristics
Symbol
Parameters
VF
Forward Voltage
IR
Reverse Current
Test Conditions
IF=20mA
IF=70mA
VR=5V
Notes:
1 : IFP Conditions--Pulse Width≦ 100μs and Duty≦ 1%.
2 : Soldering time≦5 seconds.
Min Typ Max Units Notes
1.30 1.40 1.7
V
1.40 1.56 2.0
-
-
10
μA
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Nov, 2014