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HIRP1608Q06-B30 Datasheet, PDF (2/8 Pages) CT Micro International Corporation – SMD Type 850nm Infrared Emitter
HIRP1608Q06-B30
SMD Type 850nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF
Continuous Forward Current
IFP
Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD
Power Dissipation at(or below) 25℃ Free Air Temperature
Ratings
70
0.7
5
-40 ~ +85
-40 ~ +100
260
140
Units
mA
A
V
0C
0C
0C
mW
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie
Radiant Intensity
λp Peak Wavelength
Δλ Spectral Bandwidth
θ1/2 Angle of Half Intensity
Test Conditions
IF=20mA
IF =70mA
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
1.0
1.8
-
6.0
-
mW/sr
-
-
850
-
nm
-
30
-
nm
-
65
-
deg
Electrical Characteristics
Symbol
Parameters
VF
Forward Voltage
IR
Reverse Current
Test Conditions
IF=20mA
IF=70mA
VR=5V
Notes:
1. IFP Conditions--Pulse Width≦ 100μs and Duty≦ 1%.
2. Soldering time≦ 5 seconds.
Min Typ Max Units Notes
1.30 1.40 1.7
V
1.40 1.60 2.0
-
-
10
µA
CT Micro
Proprietary & Confidential
Page 2
Rev 0(Preliminary)
Oct, 2014