FIRC5730W09-B20 Datasheet, PDF (2/7 Pages) CT Micro International Corporation – SMD Type 730nm Infrared Emitter

CT Microelectronics
FIRC5730W09-B20
SMD Type 730nm Infrared Emitter
Absolute Maximum Rating at 25⁰C
Symbol
Parameters
IF
Continuous Forward Current
IFP
Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD
Power Dissipation at(or below) 25℃Free Air Temperature
Ratings
150
1.0
5
-40 ~ +85
-40 ~ +100
260
510
Units
mA
A
V
0_C
0_C
0_C
mW
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie
Radiant Intensity
Po Total radiated power
λp Peak Wavelength
Δλ Spectral Bandwidth
θ1/2 Angle of Half Intensity
Test Conditions
IF=20mA
IF=100mA
IF =150mA
IF=20mA
IF=100mA
IF =150mA
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
-
5.0
-
-
25.3
- mW/sr
-
37.6
-
-
15.7
-
-
80
-
mW
-
118
-
720
730
750
nm
-
25
-
nm
-
60
-
deg
Electrical Characteristics
Symbol
Parameters
VF
Forward Voltage
IR
Reverse Current
Test Conditions
IF=20mA
IF=100mA
IF=150mA
VR=5V
Notes:
1 : IFP Conditions--Pulse Width≦ 100μs and Duty≦ 1%.
2 : Soldering time≦ 5 seconds.
CT Microelectronics
Proprietary & Confidential
Page 2
Min Typ Max Units Notes
1.7
2.0
2.4
2.2
2.5
3.1
V
2.3
2.7
3.4
-
-
10
μA
Rev 0(Preliminary)
Jul, 2013