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CTLM16PS05-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET | |||
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CTLM16PS05-R3
P-Channel Enhancement MOSFET
Features
⢠Drain-Source Breakdown Voltage VDSS - 50 V
⢠Drain-Source On-Resistance
RDS(ON) 2â¦, at VGS= - 10V, IDS= - 100mA
RDS(ON) 2â¦, at VGS= - 5.0V, IDS= - 100mA
â ⢠Continuous Drain Current at TA=25 ID = - 160mA
⢠Advanced high cell density Trench Technology
⢠RoHS Compliance & Halogen Free
Applications
⢠Power Management
⢠Portable Equipment
⢠Battery Powered System
⢠DC/DC Converter
⢠Load Switch
Description
The CTLM16PS05-R3 uses high performance
Trench Technology to provide excellent RDS(ON) and
low gate charge which is suitable for most of the
synchronous buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jun, 2015
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