CTLM13PS05-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CTLM13PS05-R3
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS - 50 V
• Drain-Source On-Resistance
RDS(ON) 5Ω, at VGS= - 5.0V, IDS= - 100mA
℃ • Continuous Drain Current at TA=25 ID = -130mA
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
• Power Management
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
Description
The CTLM13PS05-R3 uses high performance
Trench Technology to provide excellent RDS(ON) and
low gate charge which is suitable for most of the
synchronous buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jun, 2015