CTL281NS10-T52 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTL281NS10-T52
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 100V
• Drain-Source On-Resistance
RDS(ON) 17mΩ, at VGS= 10V, ID= 20A
RDS(ON) 20mΩ, at VGS= 4.5V, ID= 16A
℃ • Continuous Drain Current at TC=25 ID =28.1A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTL281NS10-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These
devices are particularly suited for low voltage
application.
Applications
• DC/DC Converter
• Load Switch
• LCD/LED Display inverter
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015