CTL0642NS-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTL0642NS-R3
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 20 V
• Drain-Source On-Resistance
RDS(ON) 17mΩ, at VGS= 4.5V, IDS= 6.4A
RDS(ON) 20mΩ, at VGS= 2.5V, IDS= 5.5A
RDS(ON) 25mΩ, at VGS= 1.8V, IDS= 5.0A
℃ • Continuous Drain Current at TA=25 ID = 6.4A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
• ESD protection
Applications
• Power Management
• Battery Powered System
• Portable Equipment
• DC/DC Converter
Package Outline
Description
The CTL0642NS-R3 is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance.
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015