CTL0472PS-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CTL0472PS-R3
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS -20 V
• Drain-Source On-Resistance
RDS(ON) 58mΩ, at VGS= -4.5V, ID= -4.7A
RDS(ON) 73mΩ, at VGS= -2.5V, ID= -1.0A
℃ • Continuous Drain Current at TA=25 ID = -4.7A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTL0472PS-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications
Applications
• Power Management
• Portable Equipment
• Battery Powered System
• Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015