CTL046PS02E-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CTL046PS02E-R3
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS -20 V
• Drain-Source On-Resistance
RDS(ON) 26mΩ, at VGS= -4.5V, ID= - 4.3A
RDS(ON) 32mΩ, at VGS= -2.5V, ID= -2.5A
RDS(ON) 44mΩ, at VGS= -1.8V, ID= -2.0A
℃ • Continuous Drain Current at TA=25 ID = -4.6A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
• ESD Protection
Applications
• Power Management
• DC/DC Converter
• Battery Powered System
Description
The CTL046PS02E-R3 is the P-Channel logic
enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially tailored
to minimize on-state resistance.
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015