CTL043PS01-R3 Datasheet, PDF (1/12 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CTL043PS01-R3
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS - 12 V
• Drain-Source On-Resistance
RDS(ON) 47mΩ, at VGS= - 4.5V, IDS= - 4.0A
RDS(ON) 55mΩ, at VGS= - 2.5V, IDS= - 3.0A
RDS(ON) 67mΩ, at VGS= - 1.8V, IDS= - 2.0A
℃ • Continuous Drain Current at TA=25 ID = - 4.3A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
• Power Management
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
Package Outline
Description
The CTL043PS01-R3 uses high performance
Trench Technology to provide excellent RDS(ON) and
low gate charge which is suitable for most of the
synchronous buck converter applications .
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jun, 2015