CTL0433PS-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CTL0433PS-R3
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS -30 V
• Drain-Source On-Resistance
RDS(ON) 38mΩ, at VGS= -10V, ID= -4.1A
RDS(ON) 50mΩ, at VGS= -4.5V, ID= -3.0A
℃ • Continuous Drain Current at TA=25 ID = -4.3A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTL0433PS-R3 is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance.
Applications
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
Package Outline
Schematic
Drain
Gate
Source
Drain
G
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015