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CTL0422PS-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET | |||
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CTL0422PS-R3
P-Channel Enhancement MOSFET
Features
ï· Drain-Source Breakdown Voltage VDSS -20 V
ï· Drain-Source On-Resistance
RDS(ON) 45mï, at VGS= -4.5V, ID= -4.0A
RDS(ON) 52mï, at VGS= -2.5V, ID= -3.0A
RDS(ON) 60mï, at VGS= -1.8V, ID= -2.0A
ï· Continuous Drain Current at TC=25âID = -4.0A
ï· Advanced high cell density Trench Technology
ï· RoHS Compliance & Halogen Free
Applications
ï· Power Management
ï· Lithium Ion Battery
Description
The CTL0422PS-R3 is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching and low in-line power
loss are needed in a very small outline surface mount
package.
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Nov, 2013
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