CTL0412ND Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTL0412ND
N-Channel Enhancement MOSFET
Features
 Drain-Source Breakdown Voltage VDSS 20 V
 Drain-Source On-Resistance
RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A
RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A
 Continuous Drain Current at TC=25℃ID = 4.1A
 Advanced high cell density Trench Technology
 RoHS Compliance & Halogen Free
Description
The CTL0412ND uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications tions.
Applications
 Power Management
 Lithium Ion Battery
Package Outline
Schematic
Pin 1
Pin 2
Gate 1
Source 2
Gate 2
Drain 1
Source 1
Drain 2
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Aug, 2013