CTL0402PS-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CTL0402PS-R3
P-Channel Enhancement MOSFET
Features
 Drain-Source Breakdown Voltage VDSS -20 V
 Drain-Source On-Resistance
RDS(ON) 52m, at VGS= -10V, ID= -4.2A
RDS(ON) 60m, at VGS= -4.5V, ID= -3.4A
RDS(ON) 70m, at VGS= -2.5V, ID= -2.5A
RDS(ON) 90m, at VGS= -1.8V, ID= -1.7A
 Continuous Drain Current at TC=25℃ID = -4.0A
 Advanced high cell density Trench Technology
 RoHS Compliance & Halogen Free
Description
The CTL0402PS-R3 is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount
package.
Applications
 Power Management
 Lithium Ion Battery
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Nov, 2013