CTL0383NS-R3 Datasheet, PDF (1/12 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTL0383NS-R3
N-Channel Enhancement MOSFET
Features
 Drain-Source Breakdown Voltage VDSS 30 V
 Drain-Source On-Resistance
RDS(ON) 48m, at VGS= 10V, ID= 3.4A
RDS(ON) 54m, at VGS= 4.5V, ID= 2.7A
RDS(ON) 75m, at VGS= 2.5V, ID= 1.0A
 Continuous Drain Current at TC=25℃ID = 3.8A
 Advanced high cell density Trench Technology
 RoHS Compliance & Halogen Free
Description
The CTL0383NS-R3 is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits where low in-line power loss are needed in a very
small outline surface mount package.
Applications
 Power Management
 Lithium Ion Battery
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Nov, 2013