CTL0322PS-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CTL0322PS-R3
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS -20 V
• Drain-Source On-Resistance
RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A
RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A
RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A
℃ • Continuous Drain Current at TA=25 ID = -3.2A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTL0322PS-R3 is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance.
Applications
• Power Management
• Lithium Ion Battery
• High-Side Switching
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015