CTL0266NS-R3 Datasheet, PDF (1/12 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTL0266NS-R3
N-Channel Enhancement MOSFET
Features
 Drain-Source Breakdown Voltage VDSS -20 V
 Drain-Source On-Resistance
RDS(ON) 82m, at VGS= 10V, ID= 2.6A
RDS(ON) 96m, at VGS= 4.5V, ID= 2.1A
 Continuous Drain Current at TC=25℃ID = 2.6A
 Advanced high cell density Trench Technology
 RoHS Compliance & Halogen Free
Applications
 Power Management
 Lithium Ion Battery
Description
The CTL0266NS-R3 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS
trench technology. This high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and
notebook computer power management and other
battery powered circuits where high-side switching
and low in-line power loss are needed in a very
small outline surface mount package.
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Nov, 2013