CTL0233NS-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTL0233NS-R3
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 30 V
• Drain-Source On-Resistance
RDS(ON) 92mΩ, at VGS= 10V, ID= 2.5A
RDS(ON) 142mΩ, at VGS= 4.5V, ID= 2.0A
℃ • Continuous Drain Current at TA=25 ID = 2.3A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTL0233NS-R3 is the N-Channel logic enhancement
mode power field effect transistors, using high cell
density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
Applications
• Power Management
• Lithium Ion Battery
• LCD Display inverter
• Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015