CTL0196PS-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CTL0196PS-R3
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS -60 V
• Drain-Source On-Resistance
RDS(ON) 170mΩ, at VGS= -10V, ID= -1.8A
RDS(ON) 200mΩ, at VGS= -4.5V, ID= -1.4A
℃ • Continuous Drain Current at TC=25 ID = -1.9A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTL0196PS-R3 is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance.
Applications
• Power Management
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015