CTL015NS10-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – Channel Enhancement MOSFET

CTL015NS10-R3
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 105 V
• Drain-Source On-Resistance
RDS(ON) 230mΩ, at VGS= 10V, ID= 1.5A
RDS(ON) 275mΩ, at VGS= 4.5V, ID= 1.0A
℃ • Continuous Drain Current at TA=25 ID =1.5A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTL015NS10-R3 is the N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Applications
• Power Management
• LCD Display inverter
• DC/DC Converter
• Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jun, 2015