CTL0035NS-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTL0035NS-R3
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 50 V
• Drain-Source On-Resistance
RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A
RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A
RDS(ON) 1.6Ω, at VGS= 2.75V, ID= 0.2A
℃ • Continuous Drain Current at TA=25 ID = 0.3A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
• DC/DC Converter
• Load Switch
• LCD Display inverter
• Power Management
Description
The CTL0035NS-R3 is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance.
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015