CTH8003PS-T52 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CTH8003PS-T52
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS-30V
• Drain-Source On-Resistance
RDS(ON) 6.7mΩ, at VGS= -10V, ID= -20A
RDS(ON) 8.4mΩ, at VGS= -4.5V, ID= -20A
℃ • Continuous Drain Current at TC=25 ID =-80A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTH8003PS-T52 is the P-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Applications
• Load Switch
• DC/DC Converter
• LCD Display inverter
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015