CTH6106PS-T52 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CTH6106PS-T52
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS -60 V
• Drain-Source On-Resistance
RDS(ON) 14mΩ, at VGS= -10V, IDS= -17A
RDS(ON) 16mΩ, at VGS= -4.5V, IDS= -14A
℃ • Continuous Drain Current at TC=25 ID = -61A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
• Load Switch
• Power Management
• LCD Display inverter
• DC/DC Converter
Description
The CTH6106PS-T52 uses high performance
Trench Technology to provide excellent RDS(ON) and
low gate charge which is suitable for most of the
synchronous buck converter applications .
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015