CTH4803NS-T52 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTH4803NS-T52
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 30V
• Drain-Source On-Resistance
RDS(ON) 6.5mΩ, at VGS= 10V, ID= 30A
RDS(ON) 10mΩ, at VGS= 4.5V, ID= 20A
℃, • Continuous Drain Current at TC=25 ID =48A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
These Power MOSFETs utilizes Advanced Trench
Process Technology which comes with High
Density Cell Design for Ultra Low RDS(ON).
The device exhibits rugged avalanche
characteristics and guaranteed to withstand a
stipulated level of energy in the breakdown mode.
Applications
• Switching Applications
• Motor Drivers
• Relay Drivers
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015