CTH4106NS-T52 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTH4106NS-T52
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS = 60V
• Drain-Source On-Resistance
RDS(ON) 16mΩ, at VGS= 10V, ID= 50A
℃ • Continuous Drain Current at TC=25 ID = 41A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTH4106NS –T52 uses high performance
Trench Technology to provide excellent RDS(ON)and
low gate charge which is suitable for most of the
synchronous buck converter applications .
Applications
• Notebook
• High side switching
• Power Management
Package Outline
Drain
Gate
Source
Schematic
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015