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CTH3603PS-T52 Datasheet, PDF (1/12 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET | |||
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CTH3603PS-T52
P-Channel Enhancement MOSFET
Features
⢠Drain-Source Breakdown Voltage VDSS-30V
⢠Drain-Source On-Resistance
RDS(ON) 16mâ¦, at VGS= -10V, ID= -11A
RDS(ON) 25mâ¦, at VGS= -5.0V, ID= -9A
â ⢠Continuous Drain Current at TC=25 ID =-36.7A
⢠Advanced high cell density Trench Technology
⢠RoHS Compliance & Halogen Free
Description
The CTH3603PS-T52 is the P-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Applications
⢠Load Switch
⢠DC/DC Converter
⢠Battery Powered System
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015
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