CTH2204NS-T52 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTH2204NS-T52
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 40V
• Drain-Source On-Resistance
Ω RDS(ON) 22m , at VGS= 10, ID= 12A
Ω RDS(ON) 40m , at VGS= 4.5, ID= 6A
℃ • Continuous Drain Current at T_C =25 ID =22A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTH2204NS-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Applications
• Switching Applications
• DC/DC Converter
• IPC
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015