CTH11055NS Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTH11055NS
N-Channel Enhancement MOSFET
Features
 Drain-Source Breakdown Voltage VDSS 55V
 Drain-Source On-Resistance
RDS(ON) 8m, at VGS= 10, ID= 59A
 Continuous Drain Current at TC=25℃ID =110A
 Advanced high cell density Trench Technology
 RoHS Compliance & Halogen Free
Description
These Power MOSFETs utilizes Advanced Trench
Process Technology which comes with High
Density Cell Design for Ultra Low RDS(ON).
The device exhibits rugged avalanche
characteristics and guaranteed to withstand a
stipulated level of energy in the breakdown mode.
Applications
 Switching Applications
 Motor Drivers
 Relay Drivers
Package Outline
Schematic
Pin 1
CT Micro
Proprietary & Confidential
Gate:
Drain:
Source:
Pin 1
Pin 2
Pin 3
Page 1
Rev 1
Aug, 2013