CTH10003NS-T52 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CTH10003NS-T52
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 30V
• Drain-Source On-Resistance
RDS(ON) 2.6mΩ, at VGS= 10V, ID= 20A
RDS(ON) 3.3mΩ, at VGS= 4.5V, ID= 20A
℃ • Continuous Drain Current at TC=25 ID =100A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CTH1003NS-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance
Applications
• DC/DC converters
• Motor Drivers
• Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015