CT3401-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CT3401-R3
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS - 30 V
• Drain-Source On-Resistance
RDS(ON) 53mΩ, at VGS= - 10V, IDS= - 4.1A
RDS(ON) 64mΩ, at VGS= - 4.5V, IDS= - 4.0A
RDS(ON) 86mΩ, at VGS= - 2.5V, IDS= - 1.0A
℃ • Continuous Drain Current at TA=25 ID = - 4.1A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
• Power Management
• LCD Display inverter
• Load Switch
Description
The CT3401-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for low voltage
application.
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015