S40D60PTS Datasheet, PDF (1/3 Pages) Compact Technology Corp. – Schottky Barrier Rectifier

Schottky Barrier Rectifier
FEATURES
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Excellent high temperature stability
• Trench MOS Schottky technology
• Suffix “H” indicates halogen free parts
MECHANICAL DATA
• Case: TO-247
• Terminals: Pure tin plated, lead free
• Polarity: As marked
• Weight: Approximated 1.86 grams
Primary Characteristic
IO
2X20A
VRRM
60V
IFSM
VF@20A, TJ=125°C
TJmax
275A
0.5V
150°C
Maximum Ratings Ta=25°C unless otherwise specified
Characteristics
Symbol
Maximum Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
Maximum DC Blocking Voltage
VDC
RMS Reverse Voltage
VRMS
Maximum Instaneous Forward Voltage
IF=5A, TJ=25°C
IF=20A, TJ=125°C
VF
IF=5A, TJ=25°C
IF=20A, TJ=125°C
Maximum Reverse Current at Rated VRRM
TJ=25°C
IR
TJ=125°C
Maximum Average Forward Rectified Current
Total device
IO
Per diode
Peak Forward Surge Current,
8.3 ms Single Half Sine-wave
IFSM
Superimposed on Rated Load (JEDEC method)
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Maximum Thermal Resistance
θJC
θJA
Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle
V0.0 2012-06
http://ctc-semicon.com
S40D60PTS
Value
60
60
60
42
0.38
0.58
0.3
0.5
0.2
50
40
20
400
-65 to +150
-65 to +150
1.5
60
Unit
V
V
V
V
V
mA
A
A
°C
°C
°C/W
P1/3