S40D60PT Datasheet, PDF (1/3 Pages) Compact Technology Corp. – Schottky Barrier Rectifier

Schottky Barrier Rectifier
FEATURES
‧ Low power loss, high efficiency
‧ Low forward voltage drop
‧ High forward surge capability
‧ High frequency operation
‧ Excellent high temperature stability
‧ Trench MOS Schottky technology
‧ Suffix “H” indicates halogen free parts
MECHANICAL DATA
‧ Case: TO-3P
‧ Terminals: Pure tin plated, lead free
‧ Polarity: As marked
‧ Weight: Approximated 1.86 grams
Primary Characteristic
I_O
V_RRM
I_FSM
V_F@20A, T_J=125°C
T_Jmax
2X20A
60V
400A
0.5V
150°C
Maximum Ratings Ta=25°C unless otherwise specified
Characteristics
Symbol
Maximum Repetitive Peak Reverse Voltage
V_RRM
Working Peak Reverse Voltage
V_RWM
Maximum DC Blocking Voltage
V_DC
RMS Reverse Voltage
Forward Voltage Drop
I_F=5A, T_J=25°C
I_F=20A, T_J=25°C
I_F=5A, T_J=125°C
I_F=20A, T_J=125°C
Maximum Reverse Current at Rated V_RRM
T_J=25°C
T_J=125°C
Maximum Average Forward Rectified Current
Total device
Per diode
V_RMS
V_F
I_R
I_O
Peak Forward Surge Current,
8.3 ms Single Half Sine-wave
I_FSM
Superimposed on Rated Load (JEDEC method)
Operating Temperature Range
T_J
Storage Temperature Range
T_STG
Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle
S40D60PT
Value
Unit
60
V
60
V
60
V
42
V
0.38
0.58
0.3
V
0.5
0.2
mA
50
40
A
20
400
A
-65 to +150
°C
-65 to +150
°C
V0.0 2012-06
http://ctc-semicon.com
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