S30U150FCT Datasheet, PDF (1/2 Pages) Compact Technology Corp. – Extreme Low VF Trench MOS Schottky

Extreme Low VF Trench MOS Schottky
FEATURES
‧ Low power loss, high efficiency
‧ Low forward voltage drop
‧ High forward surge capability
‧ High frequency operation
‧ Excellent high temperature stability
‧ Trench MOS Schottky technology
S30U150FCT
REVERSE VOLTAGE - 150 Volts
FORWARD CURRENT - 30.0 Amperes
TO-220F
MECHANICAL DATA
‧ Case: TO-220F
‧ Polarity: As marked
‧ Weight: Approximated 1.6 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Characteristics
Maximum Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Forward Voltage Drop
I_F=10A
I_F=10A
I_F=15 A
I_F=15 A
(T_J=25℃)
(T_J=125℃)
(T_J=25℃)
(T_J=125℃)
Maximum Reverse Current at Rated V_RRM
T_J=25°C
T_J=125°C
Maximum Average Forward Rectified Current
Total device
Per diode
Peak Forward Surge Current,
8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Current at tp=2 µs, 1 kHz,
Operating and StorageTemperature Range
Symbol
V_RRM
V_RMS
V_F
I_R
I_O
I_FSM
I_RRM
T_J, T_STG
S30U150FCT_V0
1
Value
Unit
150
V
105
V
Typ.
Max.
0.80
-
0.64
-
V
0.85
0.90
0.69
0.75
Typ.
Max.
3
30
µA
3
20
mA
30
A
15
200
A
1.0
A
-65 to +150
°C